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HT46C48AE(24SKDIP) 参数 Datasheet PDF下载

HT46C48AE(24SKDIP)图片预览
型号: HT46C48AE(24SKDIP)
PDF下载: 下载PDF文件 查看货源
内容描述: [Microcontroller]
分类和应用: 时钟LTE微控制器
文件页数/大小: 73 页 / 551 K
品牌: HOLTEK [ HOLTEK SEMICONDUCTOR INC ]
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HT46R46E/C46E/R47E/C47E/R48AE/C48AE/R49E  
Configuration  
Option  
Pin Name  
I/O  
Description  
Bidirectional 2-bit input/output port. Software instructions determine if the pin  
is a CMOS output or Schmitt Trigger input. Configuration option determines if  
PD0/PWM0  
PD1/PWM1  
Pull-high  
I/O  
I/O or PWM this pin has a pull-high resistor. The PWM output are pin-shared with pins  
PD0 and PD1 selected via a configuration option.  
OSC1, OSC2 are connected to an external RC network or external crystal,  
OSC1  
OSC2  
I
determined by configuration option, for the internal system clock. If the RC  
Crystal or RC  
O
system clock option is selected, pin OSC2 can be used to measure the sys-  
tem clock at 1/4 frequency.  
RES  
VDD  
VSS  
I
Schmitt Trigger reset input. Active low.  
Positive power supply  
¾
¾
¾
¾
¾
Negative power supply, ground  
Note: 1. Each pin on PA can be programmed through a configuration option to have a wake-up function.  
2. Individual pins can be selected to have a pull-high resistor.  
3. Pins PC2~PC4 and pin PD1/PWM1 exist but are not bonded out on the 24-pin package.  
4. Unbonded pins should be setup as outputs or as inputs with pull-high resistors to conserve power.  
Absolute Maximum Ratings  
Supply Voltage...........................VSS-0.3V to VSS+6.0V  
Input Voltage..............................VSS-0.3V to VDD+0.3V  
Storage Temperature............................-50°C to 125°C  
Operating Temperature...........................-40°C to 85°C  
IOH Total............................................................-100mA  
I
OL Total ..............................................................150mA  
Total Power Dissipation .....................................500mW  
Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may  
cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed  
in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability.  
D.C. Characteristics  
Ta=25°C  
Test Conditions  
Conditions  
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Unit  
VDD  
¾
fSYS=4MHz  
2.2  
3.3  
¾
5.5  
5.5  
1.5  
4
V
¾
¾
VDD  
Operating Voltage  
fSYS=8MHz  
V
¾
3V  
5V  
3V  
5V  
0.6  
2
mA  
mA  
mA  
mA  
No load, fSYS=4MHz  
ADC disable  
IDD1  
Operating Current (Crystal OSC)  
Operating Current (RC OSC)  
¾
0.8  
2.5  
1.5  
4
¾
No load, fSYS=4MHz  
ADC disable  
IDD2  
IDD3  
ISTB1  
¾
Operating Current  
No load, fSYS=8MHz  
ADC disable  
5V  
4
8
mA  
¾
(Crystal OSC, RC OSC)  
3V  
5V  
3V  
5V  
5
10  
1
¾
¾
¾
¾
¾
¾
¾
¾
mA  
mA  
mA  
mA  
No load,  
Standby Current (WDT Enabled)  
Standby Current (WDT Disabled)  
system HALT  
No load,  
ISTB2  
system HALT  
2
Input Low Voltage for I/O Ports,  
TMR and INT  
VIL1  
0.3VDD  
0
V
¾
¾
¾
Input High Voltage for I/O Ports,  
TMR and INT  
VIH1  
VIL2  
0.7VDD  
0
VDD  
V
V
¾
¾
¾
¾
¾
¾
0.4VDD  
Input Low Voltage (RES)  
Rev. 1.30  
5
December 19, 2007