HT45R35
Test Conditions
Conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
3V
5V
3V
5V
3V
5V
mA
mA
kW
kW
kW
kW
-2
-5
20
10
20
10
-4
-10
60
¾
¾
I/O, RREF and CREF Source
Current
IOH
V
OH=0.9VDD
100
50
¾
¾
¾
¾
RPH
Pull-high Resistance
30
60
100
50
RPL
RC1~RC12 Pull-low Resistance
30
A.C. Characteristics
Ta=25°C
Test Conditions
Conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
¾
2.2V~5.5V
3.3V~5.5V
2.2V~5.5V
3.3V~5.5V
¾
400
400
0
4000
8000
4000
8000
180
130
46
kHz
kHz
kHz
kHz
¾
¾
¾
¾
90
65
23
17
System Clock
fSYS
(Crystal OSC, RC OSC)
¾
¾
fTIMER
Timer I/P Frequency
0
¾
3V
5V
3V
5V
45
32
11
8
ms
ms
tWDTOSC
Watchdog Oscillator Period
¾
ms
ms
Watchdog Time-out Period
(WDT RC OSC)
tWDT1
Without WDT prescaler
Without WDT prescaler
33
Watchdog Time-out Period
(System Clock/4)
tWDT2
tSYS
1024
¾
¾
¾
tRES
tSST
tINT
External Reset Low Pulse Width
System Start-up Timer Period
Interrupt Pulse Width
1
¾
¾
¾
¾
¾
¾
¾
1024
¾
¾
¾
¾
2
ms
tSYS
Wake-up from HALT
1
¾
¾
ms
tLVR
Low Voltage Reset Time
0.25
1
ms
Note: *tSYS=1/fSYS
Rev. 1.30
5
May 14, 2010
HOLTEK [ HOLTEK SEMICONDUCTOR INC ]
