HT23C512
CMOS 64K´8-Bit Mask ROM
Features
·
Operating voltage: 2.7V~5.5V
·
Low power consumption
-
Operation: 25mA max. (V
CC
=5V)
·
65536´8-bit of mask ROM
·
Mask options: chip enable CE/CE/OE1/OE1 and
output enable OE/OE/NC
·
TTL compatible inputs and outputs
·
Tristate outputs
·
Fully static operation
·
28-pin DIP/SOP package
10mA max. (V
CC
=3V)
-
Standby: 30mA max. (V
CC
=5V)
10mA max. (V
CC
=3V)
·
Access time: 150ns max. (V
CC
=5V)
250ns max. (V
CC
=3V)
General Description
The HT23C512 is a read-only memory with high perfor-
mance CMOS storage device whose 512K of memory is
arranged into 65536 words by 8 bits.
For application flexibility, the chip enable and output en-
able control pins can be selected as active high or active
low. This flexibility not only allows easy interface with
most microprocessors, but also eliminates bus conten-
tion in multiple bus microprocessor systems. An addi-
tional feature of the HT23C512 is its ability to enter the
standby mode whenever the chip enable (CE/CE) is in-
active, thus reducing current consumption to below
30mA. The combination of these functions makes the
chip suitable for high density low power memory appli-
cations.
Block Diagram
X -D e c
Y -D e c
A d d re s s
B u ffe rs
A 1 5
A 0
M e m o ry
C e ll
( 6 4 K 8 B its )
X Y -P re D e c
Z -D e c
C E /C E /O E 1 /O E 1
O E /O E /N C
C o n tro l
L o g ic
S e n s e A m p
O u tp u t B u ffe rs
V S S
V C C
D 0
D 7
Rev. 1.10
1
August 30, 2002
HOLTEK [ HOLTEK SEMICONDUCTOR INC ]
