HT23C040H
CMOS 512K´8-Bit High Speed Mask ROM
Features
·
Operating voltage: 2.7V~5.5V
·
Low power consumption
-
Operation: 25mA max. (V
CC
=5V)
·
512K´8-bit of mask ROM
·
Mask option: chip enable CE/CE, and output enable
OE/OE/NC
·
TTL compatible inputs and outputs
·
Tristate outputs
·
Fully static operation
·
32-pin DIP/SOP package
10mA max. (V
CC
=3V)
-
Standby: 60mA max. (V
CC
=5V)
20mA max. (V
CC
=3V)
·
Access time: 90ns max. (V
CC
=5V)
250ns max. (V
CC
=3V)
General Description
The HT23C040H is a read-only memory with high per-
formance CMOS storage device whose 4096K of mem-
ory is arranged into 512K word by 8 bits.
For application flexibility, the chip enable and output en-
able control pins can be selected as active high or active
low. This flexibility not only allows easy interface with
most microprocessors, but also eliminates bus conten-
tion in multiple bus microprocessor systems. An addi-
tional feature of the HT23C040H is its ability to enter the
standby mode whenever the chip enable (CE/CE) is in-
active, thus reducing current consumption to below
60mA. The combination of these functions makes the
chip suitable for high density low power memory appli-
cations.
Block Diagram
P re -c h a rg e C K T
A 0
X Y
P re -d e c o d e r
A d d re s s
B u ffe rs
A 1 8
A T D
X -D e c
Y -D e c
P u ll- h ig h N M O S
R O M C e ll
A rra y
( 5 1 2 K
´
8 - B its )
Z -D e c
Z - s e le c to r
S e n s e A m p lifie r s
C E /C E
O E /O E /N C
M u x
C T R L
L a tc h
M u x
O u tp u t B u ffe rs
V S S
V C C
D 0
D 7
Rev. 1.00
1
August 15, 2002
HOLTEK [ HOLTEK SEMICONDUCTOR INC ]
