HT23C010
CMOS 128K
×
8-Bit Mask ROM
Features
•
•
•
Operating voltage: 2.7V~5.5V
Low power consumption
–
Operation: 25mA Max. (V
CC
=5V)
10mA Max. (V
CC
=3V)
–
Standby: 30
µ
A Max. (V
CC
=5V)
10
µ
A Max. (V
CC
=3V)
Access time:150ns Max. (V
CC
=5V)
250ns Max. (V
CC
=3V)
•
•
•
•
•
•
131072
×
8 bits of mask ROM
Mask options: chip enable CE/CE/OE1/
OE1B and output enable OE/OE/NC
TTL compatible inputs and outputs
Tristate outputs
Fully static operation
Package type: 28-pin DIP/SOP
32-pin DIP/SOP/PLCC
General Description
The HT23C010 is a read-only memory with
high performance CMOS storage device whose
1024K of memory is arranged into 131072
words by 8 bits.
For application flexibility, the chip enable and
output enable control pins can be selected as
active high or active low. This flexibility not
only allows easy interface with most microproc-
essors, but also eliminates bus contention in
multiple bus microprocessor systems. An addi-
tional feature of the HT23C010 is its ability to
enter the standby mode whenever the chip en-
able (CE/CE) is inactive, thus reducing current
consumption to below 30
µ
A. The combination of
these functions makes the chip suitable for high
density low power memory applications.
Block Diagram
1
24th Aug ’98