HT16C2T4 参数 Datasheet PDF下载

HT16x2Tx/HT12x2Tx

2

16

/2

12

RF Encoder

Absolute Maximum Ratings

Logic Supply Voltage .......................................................................................................

2V to 3.6V

Logic Input Voltage ........................................................................................ V

SS

-0.3V to V

DD

+0.3V

Storage Temperature .................................................................................................. -55°C to 150°C

Operating Temperature ................................................................................................ -40°C to 85°C

Note: These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum

Ratings” may cause substantial damage to the device. Functional operation of this device at other

conditions beyond those listed in the specification is not implied and prolonged exposure to extreme

conditions may affect device reliability.

Specifications apply for V

DD

= 3.0V, Ta = 25°C, Freq X’talOSC = 13.560MHz, EN = VDD. Bold values indicate

–20°C to70°C unless otherwise noted. 1kbps data rate 50% duty cycle. R

L

50ohm load (matched)

Symbol

V

IH

V

IL

R

PH

Td

I

1

I

0

I

STBY

Parameter

“H” Inp½t Voltage

“L” Inp½t Voltage

P½ll-high Resistance

One bit data width fo½

HT1½x½Tx/HT16x½Tx

Data High C½½½ent

Data Low c½½½ent

DIN disabled c½½½ent

Test Conditions

V

DD

—

—

3

3

3V

3V

3V

Dx

—

@ 315MHz½ POUT = +10dBm

@ 433.9½MHz

@ 315MHz

@ 433.9½ MHz

—

@315MHz½ V

DD

=3.3V

@433.9½MHz½ V

DD

=3.3V

@630MHz½ ½nd ha½m.

@945MHz½ 3½d ha½m.

@½67.½4MHz½ ½nd ha½m.

@1301.76MHz½ 3½d ha½m.

—

@315MHz

@433.9½MHz

@ 100kHz f½om Ca½½ie½

@ 1000kHz f½om Ca½½ie½

@ 100kHz f½om Ca½½ie½

@ 1000kHz f½om Ca½½ie½

Pin capacitance

See application ci½c½it C3½ C4

@315MHz

@433.9½MHz

STDBY t½ansition f½om LOW to

HIGH (=Pilot pe½iod)

Delta between ASK Inp½t T½ansition

f½om Low to High to RF O½tp½t

T½ansition f½om Low to High

Conditions

—

—

Min.

0.½V

DD

—

—

0.9

—

—

—

Typ.

—

—

150

1.0

13.5

3.0

1

Max.

—

0.½V

DD

—

1.1

—

—

—

Units

V

V

KΩ

ms

mA

mA

µA

RF and Crystal

—

—

—

—

—

—

—

—

—

—

—

O½tp½t powe½ level

Ha½monic o½tp½t fo½

315 MHz

Ha½monic o½tp½t fo½

433.9½ MHz

Extinction ½atio fo½ ASK

10Kbps

Occ½pied Bandwidth

315 MHz Single Side

Band Phase Noise

433.9½ MHz Single

Side Band Phase Noise

XTLIN½ XTLOUT

Exte½nal Capacitance

O½tp½t Blanking

ASK to RF O½t

Response Time

3V

3V

3V

3V

3V

3V

3V

3V

3V

3V

3V

—

—

—

—

—

—

—

—

—

—

—

10

-43

-5½

-40

-47

70

<700

<1000

-73

-77

-7½

-76

½

15

1½

1½

1

—

—

—

—

—

—

—

—

—

—

—

dBm

dBc

dBc

dBc

kHz

dBc/Hz

dBc/Hz

pF

pF

bits

μs

Rev. 1.00

4

½an½a½½ ½½½ ½011