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HT1626_09 参数 Datasheet PDF下载

HT1626_09图片预览
型号: HT1626_09
PDF下载: 下载PDF文件 查看货源
内容描述: 内存映射48'16 LCD控制器的I / O MCU [RAM Mapping 4816 LCD Controller for I/O MCU]
分类和应用: 控制器
文件页数/大小: 15 页 / 126 K
品牌: HOLTEK [ HOLTEK SEMICONDUCTOR INC ]
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PATENTED  
HT1626  
Pad Description  
Pad No.  
Pad Name  
I/O  
Description  
The OSCI and OSCO pads are connected to a 32.768kHz crystal in order to  
generate a system clock. If the system clock comes from an external clock  
source, the external clock source should be connected to the OSCI pad. But  
if an on-chip RC oscillator is selected instead, the OSCI and OSCO pads  
can be left open.  
1
OSCI  
I
2
OSCO  
O
¾
I
3
VDD  
Positive power supply  
4
VLCD  
LCD operating voltage input pad.  
Time base or Watchdog Timer overflow flag, NMOS open drain output  
2kHz or 4kHz tone frequency output pair  
Not connected  
5
IRQ  
O
O
I
6, 7  
8~11  
12~27  
28~75  
BZ, BZ  
T1~T4  
COM0~COM15  
SEG0~SEG47  
O
O
LCD common outputs  
LCD segment outputs  
Chip selection input with pull-high resistor. When the CS is logic high, the  
data and command read from or write to the HT1626 are disabled. The se-  
rial interface circuit is also reset. But if the CS is at logic low level and is in-  
put to the CS pad, the data and command transmission between the host  
controller and the HT1626 are all enabled.  
76  
CS  
I
READ clock input with pull-high resistor. Data in the RAM of the HT1626 are  
clocked out on the falling edge of the RD signal. The clocked out data will  
appear on the data line. The host controller can use the next rising edge to  
latch the clocked out data.  
77  
78  
RD  
I
I
WRITE clock input with pull-high resistor. Data on the DATA line are latched  
into the HT1626 on the rising edge of the WR signal.  
WR  
79  
80  
DATA  
VSS  
I/O Serial data input or output with pull-high resistor  
Negative power supply, ground  
¾
Absolute Maximum Ratings  
Supply Voltage .........................................-0.3V to 5.5V  
Input Voltage.............................VSS-0.3V to VDD+0.3V  
Storage Temperature............................-50°C to 125°C  
Operating Temperature...........................-25°C to 75°C  
Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may  
cause substantial damage to the device. Functional operation of this device at other conditions beyond those  
listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliabil-  
ity.  
Rev. 1.50  
5
June 9, 2009