HMC737LP4
/
737LP4E
v01.0209
MMIC VCO w/ HALF FREQUENCY OUTPUT
14.9 - 15.5 GHz
Features
Dual Output: Fo = 14.9 - 15.5 GHz
Fo/2 = 7.45 - 7.75 GHz
Pout: +9 dBm
Phase Noise: -105 dBc/Hz @ 100 kHz
No External Resonator Needed
24 Lead 4x4mm SMT Package: 16mm
2
Typical Applications
The HMC737LP4(E) is ideal for:
• Point to Point/Multipoint Radio
• Test Equipment & Industrial Controls
• SATCOM
• Military End-Use
Functional Diagram
General Description
The HMC737LP4(E) is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) MMIC VCO. The
HMC737LP4(E) integrate a resonator, negative
resistance device, varactor diode and feature half
frequency output. The VCO’s phase noise performance
is excellent over temperature, shock, and process due
to the oscillator’s monolithic structure. Power output
is +9 dBm typical from a +4.2V supply voltage. The
voltage controlled oscillator is packaged in a leadless
QFN 4x4 mm surface mount package, and requires no
external matching components.
8
VCOS
with
F
o
/2 OUTPUT - SMT
Electrical Specifications,
T
A
= +25° C, Vcc = +4.2V
Parameter
Frequency Range
Power Output
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RFOUT
Tune Voltage
Supply Current
Tune Port Leakage Current (Vtune= 13V)
Output Return Loss
Harmonics/Subharmonics
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= 5V
Frequency Drift Rate
1/2
3/2
2.5
-45
-42
12
24
1.2
Vtune
1
120
150
Fo
Fo/2
RFOUT
RFOUT/2
6
-8
Min.
Typ.
14.9 - 15.5
7.45 - 7.75
9
-3
-105
13
180
10
13
2
Max.
Units
GHz
GHz
dBm
dBm
dBc/Hz
V
mA
µA
dB
dBc
dBc
MHz pp
MHz/V
MHz/°C
8-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
