HMC616LP3 / 616LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
P1dB vs. Temperature
24
22
20
7
Amplifiers - low Noise - smT
Noise Figure vs. Temperature
[1]
1
0.9
NOISE FIGURE (dB)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.2
0.25
0.3
-40C
+25 C
Vdd=5V
Vdd=3V
+85C
P1dB (dBm)
Vdd=5V
18
16
14
12
10
0.2
Vdd=3V
+25 C
+85 C
- 40 C
0.35
0.4 0.45 0.5 0.55
FREQUENCY (GHz)
0.6
0.65
0.7
0.25
0.3
0.35
0.4
0.45
0.5
0.55
0.6
0.65
0.7
FREQUENCY (GHz)
Psat vs. Temperature
24
22
20
Psat (dBm)
18
16
14
12
10
0.2
0.25
0.3
0.35
0.4 0.45 0.5 0.55
FREQUENCY (GHz)
0.6
0.65
0.7
Vdd=3V
+25 C
+85 C
- 40 C
Vdd=5V
Output IP3 vs. Temperature
Vdd=5V
40
36
IP3 (dBm)
32
28
Vdd=3V
+25 C
+85 C
- 40 C
24
0.2
0.3
0.4
0.5
0.6
0.7
FREQUENCY (GHz)
Output IP3 and Supply Current vs.
Supply Voltage @ 400 MHz
40
38
36
IP3 (dBm)
34
32
30
28
26
2.7
3.1
3.5
3.9
4.3
4.7
5.1
VOLTAGE SUPPLY (V)
140
120
100
80
60
40
20
0
5.5
Output IP3 and Supply Current vs.
Supply Voltage @ 500 MHz
40
38
36
IP3 (dBm)
34
32
30
28
26
2.7
3.1
3.5
3.9
4.3
4.7
5.1
VOLTAGE SUPPLY (V)
140
120
100
80
60
40
20
0
5.5
Idd (mA)
[1] measurement reference plane shown on evaluation pCB drawing.
7-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Idd (mA)