HMC580ST89 / 580ST89E
v04.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 1 GHz
P1dB vs. Temperature
Psat vs. Temperature
28
24
20
Psat (dBm)
16
12
8
4
0
+25C
+85C
-40C
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
P1dB (dBm)
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0
0.3
0.5
0.8
+25C
+85C
-40C
1
1.3
1.5
0
0.25
0.5
0.75
1
1.25
1.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 vs. Temperature
45
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc = 88 mA @ 850 MHz
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
36
32
28
24
20
16
12
8
4
0
4.5
5
Vs (V)
5.5
Gain
P1dB
Psat
IP3
40
IP3 (dBm)
35
30
+25C
+85C
-40C
25
20
0
0.25
0.5
0.75
1
1.25
1.5
FREQUENCY (GHz)
Vcc vs. Icc Over Temperature for
Fixed Vs= 5V, R
BIAS
= 1.8 Ohms
94
92
90
Icc (mA)
88
86
84
82
80
78
4.82
-40C
+85C
ACPR vs. Channel Output Power
-20
-25
-30
+25C
ACPR (dBc)
-35
-40
-45
-50
-55
-60
-65
WCDMA 140MHz
WCDMA 400MHz
CDMA2000 140MHz
CDMA2000 400MHz
4.83
4.84
Vcc (V)
4.85
4.86
4.87
2
4
6
8
10
12
14
16
18
CHANNEL OUTPUT POWER (dBm)
8 - 148
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
