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552LP4E 参数 Datasheet PDF下载

552LP4E图片预览
型号: 552LP4E
PDF下载: 下载PDF文件 查看货源
内容描述: 砷化镓MMIC混频器瓦特/集成LO放大器, 1.6 - 3.0 GHz的 [GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.6 - 3.0 GHz]
分类和应用: 放大器
文件页数/大小: 8 页 / 378 K
品牌: HITTITE [ HITTITE MICROWAVE CORPORATION ]
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HMC552LP4
/
552LP4E
v03.1210
GaAs MMIC MIXER w/ INTEGRATED
LO AMPLIFIER, 1.6 - 3.0 GHz
Absolute Maximum Ratings
rF / iF input (Vcc= +5V)
LO Drive (Vcc= +5V)
+31 dBm
+10 dBm
+7 Vdc
150°C
0.6 W
105.6 °C/W
-65 to +150°C
-40 to +85°C
Class 1C
10
Mixers - siNGLe & DOUBLe BALANCeD - sMT
BiAs
Junction Temperature
Continuous Pdiss (T = 85°C)
(derate 9.5 mW/°C above 85°C)
Thermal resistance
(junction to ground paddle)
storage Temperature
Operating Temperature
esD sensitivity (HBM)
eLeCTrOsTATiC seNsiTiVe DeViCe
OBserVe HANDLiNG PreCAUTiONs
Outline Drawing
NOTes:
1. LeADFrAMe MATeriAL: COPPer ALLOY
2. DiMeNsiONs Are iN iNCHes [MiLLiMeTers]
3. LeAD sPACiNG TOLerANCe is NON-CUMULATiVe.
4. PAD BUrr LeNGTH sHALL Be 0.15mm MAxiMUM.
PAD BUrr HeiGHT sHALL Be 0.05mm MAxiMUM.
5. PACKAGe WArP sHALL NOT exCeeD 0.05mm.
6. ALL GrOUND LeADs AND GrOUND PADDLe MUsT Be
sOLDereD TO PCB rF GrOUND.
7. reFer TO HiTTiTe APPLiCATiON NOTe FOr sUGGesTeD
LAND PATTerN.
Package Information
Part Number
HMC552LP4
HMC552LP4e
Package Body Material
Low stress injection Molded Plastic
roHs-compliant Low stress injection Molded Plastic
Lead Finish
sn/Pb solder
100% matte sn
MsL rating
MsL1
MsL1
[1]
Package Marking
[3]
H552
xxxx
H552
xxxx
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number xxxx
10 - 5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com