HMC479ST89 / 479ST89E
v02.0710
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+6.0 Vdc
8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RF Input Power (RFIN)(Vcc = +4.2 Vdc) +17 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 14.76 mW/°C above 85 °C)
0.960 W
Thermal Resistance
(junction to lead)
67.6 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +85 °C
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL:
MOLDING COMPOUND MP-180S OR EQUIVALENT.
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING.
3. LEAD PLATING: 100% MATTE TIN.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
H479
XXXX
HMC479ST89
Low Stress Injection Molded Plastic
Sn/Pb Solder
H479
XXXX
MSL1 [2]
HMC479ST89E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 119
HITTITE [ HITTITE MICROWAVE CORPORATION ]
