HMC416LP4
/
416LP4E
v02.0805
MMIC VCO w/ BUFFER
AMPLIFIER, 2.75 - 3.0 GHz
Features
Pout: +4.5 dBm
Phase Noise: -114 dBc/Hz @100 k Hz
No External Resonator Needed
Single Supply: 3V @ 37 mA
QFN Leadless SMT Package, 16 mm
2
Typical Applications
Low noise MMIC VCO w/Buffer Amplifier for:
• Wireless Infrastructure
• Industrial Controls
• Test Equipment
• Military
Functional Diagram
General Description
The HMC416LP4 & HMC416LP4E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC VCOs
with integrated resonators, negative resistance
devices, varactor diodes, and buffer amplifiers.
Covering 2.75 to 3.0 GHz, the VCO’s phase noise
performance is excellent over temperature, shock,
vibration and process due to the oscillator’s monolithic
structure. Power output is 4.5 dBm typical from a
single supply of 3V @ 37 mA. The voltage controlled
oscillator is packaged in a low cost leadless QFN 4 x 4
mm surface mount package.
11
VCO
S
& PLOs - SMT
Electrical Specifi cations,
T
A
= +25° C, Vcc = +3V
Parameter
Frequency Range
Power Output
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output
Tune Voltage (Vtune)
Supply Current (Icc) (Vcc = +3.0V)
Tune Port Leakage Current
Output Return Loss
Harmonics
2nd
3rd
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= +5V
Frequency Drift Rate
9
-5
-16
3
-1
0.3
0
37
10
1.5
Min.
Typ.
2.75 - 3.0
4.5
-114
10
Max.
Units
GHz
dBm
dBc/Hz
V
mA
μA
dB
dBc
dBc
MHz pp
MHz/V
MHz/°C
11 - 66
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
