HMC376LP3
/
376LP3E
v01.0610
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
7
AMPLIFIERS - LOW NOISE - SMT
Typical Applications
The HMC376LP3 / HMC376LP3E is ideal for:
• Cellular/3G Infrastructure
• Base Stations & Repeaters
• CDMA, W-CDMA, & TD-SCDMA
• Private Land Mobile Radio
• GSM/GPRS & EDGE
• UHF Reallocation Applications
Features
Noise Figure: 0.7 dB
Output IP3: +36 dBm
Gain: 15 dB
Externally Adjustable Supply Current
Single Positive Supply: +5V
50 Ohm Matched Input/Output
Functional Diagram
General Description
The HMC376LP3 & HMC376LP3E are GaAs PHEMT
MMIC Low Noise Amplifiers that are ideal for GSM
& CDMA cellular basestation front-end receivers
operating between 700 and 1000 MHz. The amplifier
has been optimized to provide 0.7 dB noise figure,
15 dB gain and +36 dBm output IP3 from a single
supply of +5V. The HMC376LP3(E) feature an
externally adjustable supply current which allows the
designer to tailor the linearity performance of the LNA
for each application. For applications which require
improved noise figure, please see the HMC617LP3(E).
Electrical Specifi cations,
T
A
= +25° C, Vdd = +5V, Rbias = 10 Ohms*
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone, 1 MHz tone spacing)
Supply Current (Idd)
*Rbias resistor value sets current, see application circuit herein.
12.5
Min.
Typ.
810 - 960
14.5
0.005
0.7
13
12
20
21.5
22
36
73
0.01
1.0
11.5
Max.
Min.
Typ.
700 - 1000
14.5
0.005
0.7
14
12
22
21
22
36
73
0.01
1.0
Max.
Units
MHz
dB
dB / °C
dB
dB
dB
dB
dBm
dBm
dBm
mA
7-1
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
