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349MS8GE 参数 Datasheet PDF下载

349MS8GE图片预览
型号: 349MS8GE
PDF下载: 下载PDF文件 查看货源
内容描述: 高隔离SPDT无反射开关, DC - 4 GHz的 [HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz]
分类和应用: 开关光电二极管分离技术隔离技术
文件页数/大小: 6 页 / 214 K
品牌: HITTITE [ HITTITE MICROWAVE CORPORATION ]
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HMC349MS8G
/
349MS8GE
v02.0607
HIGH ISOLATION SPDT
NON-REFLECTIVE SWITCH, DC - 4 GHz
Features
High Isolation: 70 dB @ 1 GHz
57 dB @ 2 GHz
Single Positive Control: 0/+5V
+52 dBm Input IP3
Non-Reflective Design
All Off State
Ultra Small MS8G SMT Package: 14.8 mm
2
Included in the HMC-DK005 Designer’s Kit
Typical Applications
The HMC349MS8G / HMC349MS8GE is ideal for:
• Basestation Infrastructure
• MMDS & 3.5 GHz WLL
• CATV/CMTS
• Test Instrumentation
Functional Diagram
General Description
The HMC349MS8G & HMC349MS8GE are high
isolation non-reflective DC to 4 GHz GaAs MESFET
SPDT switches in low cost 8 lead MSOP8G surface
mount packages with exposed ground paddles.
The switch is ideal for cellular/PCS/3G basestation
applications yielding 50 to 60 dB isolation, low
0.8 dB insertion loss and +52 dBm input IP3. Power
handling is excellent up through the 3.5 GHz WLL
band with the switch offering a P1dB compression
point of +31 dBm. On-chip circuitry allows a single
positive voltage control of 0/+5 Volts at very low DC
currents. An enable input (EN) set to logic high will
put the switch in an “all off” state.
10
SWITCHES - SMT
Electrical Specifi cations,
T
A
= +25° C, Vctl = 0/+5 Vdc, Vdd = +5 Vdc, 50 Ohm System
Parameter
Frequency
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
0.5 - 2.0 GHz
0.5 - 3.0 GHz
0.5 - 4.0 GHz
0.25 - 4.0 GHz
0.25 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
DC - 4.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
40
120
ns
ns
27
60
54
45
42
Min.
Typ.
0.8
0.9
1.2
1.8
70
57
50
47
23
18
13
8
20
17
14
31
53
50
49
47
Max.
1.1
1.2
1.5
2.1
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
Insertion Loss
Isolation (RFC to RF1/RF2)
Return Loss (On State)
Return Loss (Off State)
Input Power for 1 dB Compression
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone)
Switching Speed
10 - 244
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com