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226E 参数 Datasheet PDF下载

226E图片预览
型号: 226E
PDF下载: 下载PDF文件 查看货源
内容描述: 砷化镓MMIC + 3V SOT26发送/接收开关, DC - 2 GHz的 [GaAs MMIC +3V SOT26 TRANSMIT / RECEIVE SWITCH, DC - 2 GHz]
分类和应用: 开关
文件页数/大小: 4 页 / 175 K
品牌: HITTITE [ HITTITE MICROWAVE CORPORATION ]
 浏览型号226E的Datasheet PDF文件第1页浏览型号226E的Datasheet PDF文件第2页浏览型号226E的Datasheet PDF文件第4页  
HMC226
/
226E
v03.0505
Outline Drawing
D
E
U
IN
T
N
O
T
C
C
S
U
I
D
D
O
R
P
New
for
ded
men
com
t Re
No
NOTES:
GaAs MMIC +3V SOT26 TRANSMIT /
RECEIVE SWITCH, DC - 2 GHz
s
ign
Des
11
SWITCHES - SPDT T/R - SMT
Package Information
Part Number
HMC226
HMC226E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
H226
XXXX
226E
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Typical Application Circuit
Notes:
1. Set logic gate and switch Vdd = +3V to +5V and use
HCT series logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS
logic (HC) with Vdd of 3 to 8 Volts applied to the CMOS
logic gates.
3. DC Blocking capacitors are required for each RF port as
shown. Capacitor value determines lowest frequency of
operation.
4. Highest RF signal power capability is achieved with V
set to +10V. The switch will operate properly (but at
lower RF power capability) at bias voltages down to +3V.
11 - 4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com