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HD6473434F16 参数 Datasheet PDF下载

HD6473434F16图片预览
型号: HD6473434F16
PDF下载: 下载PDF文件 查看货源
内容描述: 12伏不能应用于S -掩模模型(单电源规格) ,因为这可能会永久损坏设备。 [12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.]
分类和应用: 外围集成电路微控制器可编程只读存储器时钟
文件页数/大小: 752 页 / 2557 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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2.3.2  
Memory Data Formats  
Figure 2.4 indicates the data formats in memory.  
Word data stored in memory must always begin at an even address. In word access the least  
significant bit of the address is regarded as 0. If an odd address is specified, no address error  
occurs but the access is performed at the preceding even address. This rule affects MOV.W  
instructions and branching instructions, and implies that only even addresses should be stored in  
the vector table.  
Data Type  
Address  
Data Format  
7
0
1-bit data  
Byte data  
Address n  
Address n  
7
6
5
4
3
2
1
0
MSB  
MSB  
LSB  
Upper 8 bits  
Lower 8 bits  
Even address  
Odd address  
Word data  
Byte data (CCR) on stack  
Word data on stack  
LSB  
MSB  
MSB  
CCR  
LSB  
LSB  
Even address  
Odd address  
*
CCR  
MSB  
Even address  
Odd address  
LSB  
Note: * Ignored on return  
Legend:  
CCR: Condition code register  
Figure 2.4 Memory Data Formats  
When the stack is addressed by register R7, it must always be accessed a word at a time. When the  
CCR is pushed on the stack, two identical copies of the CCR are pushed to make a complete word.  
When they are restored, the lower byte is ignored.  
25  
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