4AC14
Absolute Maximum Ratings (for each device, Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
150
150
7
V
V
5
A
Collector peak current
Diode current
IC(peak)
10
5
A
ID
A
Collector power dissipation
PC*1
4
W
PC*1 (TC = 25°C) 28
Junction temperature
Tj
150
–55 to +150
°C
°C
Storage temperature
Tstg
Note: 1. 4 devices operation.
Electrical Characteristics (for each device, Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown V(BR)CBO
voltage
150
—
—
V
IC = 0.1 mA, IE = 0
Collector to emitter sustain
voltage
VCEO(SUS) 150
—
—
—
—
V
IC = 0.2 A, L = 20 mHz, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
7
V
IE = 50 mA, IC = 0
Collector cutoff current
ICBO
ICEO
hFE
—
—
—
—
—
10
µA
VCB = 120 V, IE = 0
VCE = 120 V, RBE = ∞
VCE = 3 V, IC = 3 A*1
IC = 3 A, IB = 6 mA*1
—
10
DC current transfer ratio
1000
—
20000
1.5
Collector to emitter saturation VCE(sat)
voltage
V
V
V
Base to emitter saturation
voltage
VBE(sat)
—
—
—
—
2.0
3.5
IC = 3 A, IB = 6 mA*1
ID = 5 A
C to E diode forward current
Note: 1. Pulse test.
VD
2
HITACHI [ HITACHI SEMICONDUCTOR ]
