2SD2107
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
70
60
5
—
—
V
IC = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
—
—
—
—
V
IC = 50 mA, RBE = ∞
IE = 10 µA, IC = 0
Emitter to base breakdown
voltage
V(BR)EBO
V
Collector cutoff current
DC current transfer ratio
Base to emitter voltage
ICBO
—
—
60
35
—
—
—
—
—
—
—
—
10
µA
VCB = 60 V, IE = 0
ICEO
10
VCE = 50 V, RBE = ∞
VCE = 4 V, IC = 1 A*1
VCE = 4 V, IC = 0.1 A*1
VCE = 4 V, IC = 1 A*1
IC = 2 A, IB = 0.2 A*1
2
hFE1
hFE2
VBE
*
200
1.0
1.0
V
V
Collector to emitter saturation VCE(sat)
voltage
Base to emitter saturation
voltage
VBE(sat)
—
—
1.2
V
IC = 2 A, IB = 0.2 A*1
Notes: 1. Pulse test.
2. The 2SD2107 is grouped by hFE1 as follows.
B
C
60 to 120
100 to 200
Maximum Collector Dissipation Curve
30
20
10
Typical Output Characteristics
TC = 25°C
5
4
3
2
1
10 mA
0
50
100
150
0
2
4
6
8
10
(V)
Case temperature TC (°C)
Collector to emitter voltage VCE
2
HITACHI [ HITACHI SEMICONDUCTOR ]
