2SC1906
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
Tj
Tstg
Ratings
30
19
2
50
–50
300
150
–55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
30
19
2
—
40
600
—
—
—
—
—
Typ
—
—
—
—
—
1000
1.0
0.2
10
33
18
Max
—
—
—
0.5
—
—
2.0
1.0
25
—
—
MHz
pF
V
ps
dB
dB
Unit
V
V
V
µA
Test conditions
I
C
= 10
µA,
I
E
= 0
I
C
= 3 mA, R
BE
=
∞
I
E
= 10
µA,
I
C
= 0
V
CB
= 10 V, I
E
= 0
V
CE
= 10 V, I
C
= 10 mA
V
CE
= 10 V, I
C
= 10 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
I
C
= 20 mA, I
B
= 4 mA
V
CB
= 10 V, I
C
= 10 mA,
f = 31.8 MHz
V
CE
= 10 V,
I
C
= 5 mA
V
CE
= 10 V,
I
C
= 5 mA
f = 45 MHz
f = 200 MHz
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Gain bandwidth product
Collector output capacitance
Collector to emitter saturation
voltage
Base time constant
Power gain
V
(BR)EBO
I
CBO
h
FE
f
T
Cob
V
CE(sat)
r
bb’
PG
•
C
C
2
HITACHI [ HITACHI SEMICONDUCTOR ]
