2SC1775, 2SC1775A
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
2SC1775
90
90
5
50
300
150
–55 to +150
2SC1775A
120
120
5
50
300
150
–50 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
2SC1775
Item
Collector to emitter
breakdown voltage
Collector cutoff current
Symbol Min
V
(BR)CEO
I
CBO
90
—
—
DC current transfer ratio h
FE1
*
1
h
FE2
Base to emitter voltage V
BE
Collector to emitter
saturation voltage
V
CE(sat)
400
160
—
—
—
—
—
Typ
—
—
—
—
—
—
—
200
1.6
—
Max
—
0.5
—
2SC1775A
Min
120
—
—
Typ
—
—
—
—
—
—
—
200
1.6
—
Max
—
—
0.5
1200
—
0.75
0.5
—
—
5.0
V
V
MHz
pF
dB
Unit
V
µA
µA
Test conditions
I
C
= 1 mA, R
BE
=
∞
V
CB
= 75 V, I
E
= 0
V
CB
= 100 V, I
E
= 0
V
CE
= 12 V, I
C
= 2 mA
V
CE
= 12 V,
I
C
= 0.1 mA
V
CE
= 12 V, I
C
= 2 mA
I
C
= 10 mA, I
B
= 1 mA
V
CE
= 12 V, I
C
= 2 mA
V
CB
= 25 V, I
E
= 0,
f = 1 MHz
V
CE
= 6 V,
I
C
= 50
µA,
R
g
= 50 kΩ
f = 10
Hz
f=1
kHz
1200 400
—
0.75
0.5
—
—
5.0
160
—
—
—
—
—
Gain bandwidth product f
T
Collector output
capacitance
Noise figure
Cob
NF
—
Note:
E
400 to 800
—
1.5
—
—
1.5
dB
1. The 2SC1775/A is grouped by h
FE1
as follows.
F
600 to 1200
2
HITACHI [ HITACHI SEMICONDUCTOR ]
