2SC1472 (K)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
30
—
—
2000
3000
3000
—
—
50
—
—
Typ
—
—
—
—
—
—
—
—
—
—
60
Max
—
100
100
100000
—
—
1.5
2.0
—
10
—
V
V
MHz
pF
ns
Unit
V
nA
nA
Test conditions
I
C
= 1 mA, R
BE
=
∞
V
CB
= 30 V, I
E
= 0
V
EB
= 10 V, I
C
= 0
I
C
= 10 mA, V
CE
= 5 V
I
C
= 100 mA, V
CE
= 5 V
(Pulse Test)
I
C
= 400 mA, V
CE
= 5 V
(Pulse Test)
I
C
= 100 mA, I
B
= 0.1 mA
I
C
= 100 mA, I
B
= 0.1 mA
V
CE
= 5 V, I
C
= 10 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CC
= 11 V
I
C
= 100 I
B1
= 100 mA
I
B2
= –I
B1
Collector to emitter breakdown V
(BR)CEO
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
I
CBO
I
EBO
h
FE1
*
1
h
FE2
*
1
h
FE3
*
1
Collector to emitter saturation
voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
Turn on time
V
CE(sat)
V
BE(sat)
f
T
Cob
t
on
Turn off time
Storage time
Note:
h
FE1
h
FE2
h
FE3
A
t
off
t
stg
B
—
—
800
350
—
—
ns
ns
1. The 2SC1472(K) is grouped by h
FE
as follows.
2000 to 100000 5000 to 100000
3000 min
3000 min
10000 min
10000 min
Switching Time Test Circuit
D.U.T.
6k
50
–6 V
6k
0.002
– +
50
100
0.002
– +
50
11 V
Unit R :
Ω
C :
µF
CRT
13 V
Input
0
Output
0
Response Waveform
90%
10%
90%
10%
t
d
t
on
t
stg
t
off
90%
10%
P.G.
tr, tf
≤
15 ns
PW
≥
10
µs
duty ratio
≤
10%
3
HITACHI [ HITACHI SEMICONDUCTOR ]
