2SC1345 (K)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Ratings
55
50
5
100
200
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
55
50
5
—
—
250
—
—
—
—
—
—
Note:
D
250 to 500
Typ
—
—
—
—
—
—
—
—
2.3
230
—
—
Max
—
—
—
0.5
0.5
1200
0.75
0.5
3.5
—
8
1
V
V
pF
MHz
dB
dB
Unit
V
V
V
µA
µA
Test conditions
I
C
= 10
µA,
I
E
= 0
I
C
= 1 mA, R
BE
=
∞
I
E
= 10
µA,
I
C
= 0
V
CB
= 18 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
V
CE
= 12 V, I
C
= 2 mA
V
CE
= 12 V, I
C
= 2 mA
I
C
= 10 mA, I
B
= 1 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CE
= 12 V, I
C
= 2 mA
V
CE
= 6 V, I
C
= 0.1 mA,
f = 10 Hz, R
g
= 10 kΩ
V
CE
= 6 V, I
C
= 0.1 mA,
f = 1 kHz, R
g
= 10 kΩ
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Base to emitter voltage
Collector to emitter saturation
voltage
Collector output capacitance
Gain bandwidth product
Noise figure
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
1
V
BE
V
CE(sat)
Cob
f
T
NF
1. The 2SC1345(K) is grouped by h
FE
as follows.
E
400 to 800
F
600 to 1200
2
HITACHI [ HITACHI SEMICONDUCTOR ]
