2SC1344, 2SC1345
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
2SC1344
30
30
5
100
200
150
–55 to +150
2SC1345
55
50
5
100
200
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
2SC1344
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min
30
30
5
—
—
250
—
—
—
—
—
—
Note:
D
250 to 500
Typ
—
—
—
—
—
—
—
—
230
—
—
—
Max
—
—
—
0.5
0.5
2SC1345
Min
55
50
5
—
—
Typ
—
—
—
—
—
—
—
—
230
—
—
—
Max
—
—
—
0.5
0.5
1200
0.75
0.5
—
3.5
8
1
V
V
MHz
pF
dB
dB
Unit
V
V
V
µA
µA
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= 1 mA, R
BE
=
∞
I
E
= 10
µA,
I
C
= 0
V
CB
=18 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
V
CE
= 12 V, I
C
= 2 mA
V
CE
= 12 V, I
C
= 2 mA
I
C
= 10 mA, I
B
= 1 mA
V
CE
= 12 V, I
C
= 2 mA
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
V
CE
= 6 V, I
C
= 0.1 mA,
f = 10 Hz, R
g
= 10 kΩ
V
CE
= 6 V, I
C
= 0.1 mA,
f = 1 kHz, R
g
= 10 kΩ
DC current transfer ratio h
FE
*
1
Base to emitter voltage V
BE
Collector to emitter
saturation voltage
V
CE(sat)
1200 250
0.75
0.5
—
3.5
8
1
—
—
—
—
—
—
Gain bandwidth product f
T
Collector output
capacitance
Noise figure
Cob
NF
1. The 2SC1344 and 2SC1345 are grouped by h
FE
as follows.
E
400 to 800
F
600 to 1200
2
HITACHI [ HITACHI SEMICONDUCTOR ]
