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2SC1342 参数 Datasheet PDF下载

2SC1342图片预览
型号: 2SC1342
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延平面 [Silicon NPN Epitaxial Planar]
分类和应用: 晶体晶体管放大器
文件页数/大小: 10 页 / 55 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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2SC1342
Input Admittance vs. Collector
to Emitter Voltage
Reverse Transfer Admittance y
re
(mS)
20
Input Admittance y
ie
(mS)
b
ie
10
g
ie
Reverse Transfer Admittance vs.
Collector to Emitter Voltage
–1.0
b
re
–0.5
–0.2
–0.1
–0.05
g
re
Y
re
= g
re
+ jb
re
I
C
= 1 mA
f = 100 MHz
5
2
Y
ie
= g
ie
+ jb
ie
I
C
= 1 mA
f = 100 MHz
–0.02
–0.01
1
2
5
10 20
Collector to Emitter Voltage V
CE
(V)
1
1
2
5
10
20
Collector to Emitter Voltage V
CE
(V)
Forward Transfer Admittance vs.
Collector to Emitter Voltage
100
Output Admittance y
oe
(mS)
Forward Transfer y
fe
(mS)
Y
fe
= g
fe
+ jb
fe
I
C
= 1 mA
f = 100 MHz
g
fe
20
b
fe
2.0
Output Admittance vs. Collector to
Emitter Voltage
50
1.0
b
oe
0.5
Y
oe
= g
oe
+ jb
oe
I
C
= 1 mA
f = 100 MHz
10
0.2
g
oe
5
1
2
5
10
20
Collector to Emitter Voltage V
CE
(V)
0.1
1
2
5
10
20
Collector to Emitter Voltage V
CE
(V)
7