2SC1342
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
30
20
V
4
V
30
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
PC
100
Tj
150
Tstg
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
30
20
4
—
—
V
IC = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
—
—
—
—
V
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
Emitter to base breakdown
voltage
V(BR)EBO
V
Collector cutoff current
DC current transfer ratio
ICBO
hFE*1
—
35
—
—
0.5
200
1.2
µA
VCB = 10 V, IE = 0
—
VCE = 6 V, IC = 1 mA
IC = 10 mA, IB = 1 mA
Collector to emitter saturation VCE(sat)
voltage
0.8
V
Collector output capacitance
Base time constant
Cob
—
—
1.1
20
1.5
35
pF
ps
VCB = 10 V, IE = 0, f = 1 MHz
rbb’ •CC
VCB = 6 V, IC = 1 mA,
f = 31.8 MHz
Gain bandwidth product
Noise figure
fT
150
—
320
5.5
—
MHz
dB
VCE = 6 V, IC = 1 mA
NF
8.5
VCE = 6 V, IC = 1 mA,
f = 100 MHz, Rg = 50 Ω
Reverse transfer capacitance Cre
Power gain PG
—
0.9
17
1.2
—
pF
dB
VCE = 10 V, IE = –1 mA,
f = 1 MHz
13
VCE = 6 V, IC = 1 mA,
f = 100 MHz, Rg = 100 Ω,
RL = 550 Ω, Unneutralized
Note: 1. The 2SC1342 is grouped by hFE as follows.
A
B
C
35 to 70
60 to 120
100 to 200
2
HITACHI [ HITACHI SEMICONDUCTOR ]
