2SC1214
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Ratings
50
50
4
500
600
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
50
50
4
—
60
10
—
—
Typ
—
—
—
—
—
—
0.2
0.64
Max
—
—
—
0.5
320
—
0.6
—
V
V
Unit
V
V
V
µA
Test conditions
I
C
= 10 µA, I
E
= 0
I
C
= 1 mA, R
BE
=
I
E
= 10 µA, I
C
= 0
V
CB
= 20 V, I
E
= 0
V
CE
= 3 V, I
C
= 10 mA
V
CE
= 3 V, I
C
= 500 mA
(pulse test)
I
C
= 150 mA, I
B
= 15 mA
(Pulse test)
V
CE
= 3 V, I
C
= 10 mA
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
V
(BR)EBO
I
CBO
h
FE
*
h
FE
Collector to emitter saturation
voltage
Base to emitter voltage
Note:
B
60 to 120
C
100 to 200
D
160 to 320
V
CE(sat)
V
BE
1. The 2SC1214 is grouped by h
FE
as follows.
See characteristic curves of 2SC1213.
HITACHI [ HITACHI SEMICONDUCTOR ]
