2SC1213, 2SC1213A
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
2SC1213
35
35
4
500
400
150
–55 to +150
2SC1213A
50
50
4
500
400
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
2SC1213
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Symbol Min
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
35
35
4
—
60
10
—
—
Typ
—
—
—
—
—
—
0.2
0.64
Max
—
—
—
0.5
320
—
0.6
—
2SC1213A
Min
50
50
4
—
60
10
—
—
Typ
—
—
—
—
—
—
0.2
0.64
Max
—
—
—
0.5
320
—
0.6
—
V
V
Unit
V
V
V
µA
Test conditions
I
C
= 10
µA,
I
E
= 0
I
C
= 1 mA, R
BE
=
∞
I
E
= 10
µA,
I
C
= 0
V
CB
= 20 V, I
E
= 0
V
CE
= 3 V, I
C
=10 mA
V
CE
= 3 V,
I
C
= 500 mA*
2
I
C
= 150 mA,
I
B
= 15 mA*
2
V
CE
= 3 V, I
C
= 10 mA
DC current tarnsfer ratio h
FE
*
1
h
FE
Collector to emitter
saturation voltage
V
CE(sat)
Base to emitter voltage V
BE
Notes: 1. The 2SC1213 and 2SC1213A are grouped by h
FE
as follows.
2. Pulse test
B
60 to 120
C
100 to 200
D
160 to 320
2
HITACHI [ HITACHI SEMICONDUCTOR ]
