2SC1213A (K)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Ratings
50
50
4
500
400
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
50
50
4
—
60
10
Typ
—
—
—
—
—
—
0.64
—
—
—
—
—
—
—
0.12
0.83
7.0
120
0.25
0.85
0.4
Max
—
—
—
0.5
320
—
—
0.6
1.2
—
—
—
—
—
V
V
V
pF
MHz
µS
µS
µS
V
CC
= 5 V
I
C
= I
B1
= –I
B2
= 20 mA
Unit
V
V
V
µA
Test conditions
I
C
= 10
µA,
I
E
= 0
I
C
= 1.0 mA, R
BE
=
∞
I
E
= 10
µA,
I
C
= 0
V
CB
= 20 V, I
E
= 0
V
CE
= 3 V, I
C
= 10 mA
V
CE
= 3 V, I
C
= 500 mA*
2
V
CE
= 3 V, I
C
= 10 mA
I
C
= 150 mA, I
B
= 15 mA*
2
I
C
= 150 mA, I
B
= 15 mA*
2
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CE
= 3 V, I
C
= 10 mA
V
CC
= 10.3 V
I
C
= 10 I
B1
= –10 I
B2
= 10 mA
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
V
(BR)EBO
I
CBO
h
FE
*
1
h
FE
Base to emitter voltage
Collector to emitter saturation
voltage
Base to emitter satruation
voltage
Collector output capacitance
Gain bandwidth product
Turn on time
Turn off time
Storage time
V
BE
V
CE(sat)
V
BE(sat)
Cob
f
T
t
on
t
off
t
stg
Notes: 1. The 2SC1213A(K) is grouped by h
FE
as follows.
2. Pulse test
B
60 to 120
C
100 to 200
D
160 to 320
2
HITACHI [ HITACHI SEMICONDUCTOR ]
