2SC1162
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
35
35
5
—
60
20
—
—
—
Typ
—
—
—
—
—
—
0.93
0.5
180
Max
—
—
—
20
320
—
1.5
1.0
—
V
V
MHz
Unit
V
V
V
µA
Test conditions
I
C
= 1 mA, I
E
= 0
I
C
= 10 mA, R
BE
=
∞
I
E
= 1 mA, I
C
= 0
V
CB
= 35 V, I
E
= 0
V
CE
= 2 V, I
C
= 0.5 A
V
CE
= 2 V, I
C
= 1.5 A
(pulse test)
V
CE
= 2 V, I
C
= 1.5 A
(pulse test)
I
C
= 2 A, I
B
= 0.2 A (pulse test)
V
CE
= 2 V, I
C
= 0.2 A
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
V
(BR)EBO
I
CBO
h
FE
*
1
h
FE
Base to emitter voltage
Collector to emitter saturation
voltage
Gain bandwidth product
Note:
B
60 to 120
V
BE
V
CE(sat)
f
T
1. The 2SC1162 is grouped by h
FE
as follows.
C
100 to 200
D
160 to 320
Maximum Collector Dissipation Curve
0.8
Collector power dissipation P
C
(W)
0.75
Collector current I
C
(A)
0.6
5
Area of Safe Operation
I
C(max)
(DC Operation)
2
P
C
=
10
T
C
= 25°C
1.0
0.5
W
0.4
0.2
0.2
0.1
0
50
100
150
Ambient temperature Ta (°C)
200
1
5
20
50
2
10
Collector to emitter voltage V
CE
(V)
2
HITACHI [ HITACHI SEMICONDUCTOR ]
