2SB831
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
P
C
Tj
Tstg
Ratings
–25
–20
–5
–0.7
–1
150
150
–55 to +150
Unit
V
V
V
A
A
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
*
1
V
CE(sat)
V
BE
Min
–25
–20
–5
—
85
—
—
Typ
—
—
—
—
—
—
—
Max
—
—
—
–1.0
240
–0.5
–1.0
V
V
Unit
V
V
V
µA
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA, R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CB
= –20 V, I
E
= 0
V
CE
= –1 V, I
C
= –0.15 A*
2
I
C
= –0.5 A, I
B
= –0.05 A*
2
V
CE
= –1 V, I
C
= –0.15 A*
2
Notes: 1. The 2SB831 is grouped by h
FE
as follows.
2. Pulse test
Grade
Mark
h
FE
B
BB
85 to 170
C
BC
120 to 240
See characteristic curves of 2SB561.
2
HITACHI [ HITACHI SEMICONDUCTOR ]
