2SB740
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(W)
1.2
Collector Current I
C
(mA)
Typical Output Characteristics (1)
–100
–0.4
5
–80
–0.4
–0.35
–0.3
0.8
–60
–0.25
–0.2
–40
–0.15
–0.1
0.4
–20
–0.05 mA
I
B
= 0
0
50
100
Ambient Temperature Ta (°C)
150
0
–2
–4
–6
–8
–10
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics (2)
–2.0
–50
–40
–30
–20
Typical Transfer Characteristics
–1,000
Collector Current I
C
(mA)
–300
–100
–30
–10
–3
–1
0
–0.2
–0.4
–0.6
–0.8 –1.0
Base to Emitter Voltage V
BE
(V)
V
CE
= –2 V
Collector Current I
C
(A)
–1.6
–1.2
m
–10
A
–0.8
P
C
=0
.9 W
–0.4
I
B
= 0
0
–0.4
–0.8
–1.2
–1.6
–2.0
Collector to Emitter Voltage V
CE
(V)
3
HITACHI [ HITACHI SEMICONDUCTOR ]
