2SB715, 2SB716, 2SB716A
Typical Output Characteristics
Maximum Collector Dissipation Curve
Collector Power Dissipation Pc (mW)
750
Collector Current I
C
(mA)
–10
–16
–14
–12
–10
–8
500
–6
–8
–4
–6
–4
–2
µA
250
–2
I
B
= 0
0
50
100
150
Ambient Temperature Ta (°C)
0
–10
–20
–30
–40
–50
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics
–10
1,000
Collector Current I
C
(mA)
–3
–1.0
–0.3
Ta = 100°C
–0.1
–0.03
75 50 25
–0.01
–0.2
0
–25
0
–0.01 –0.03
DC Current Transfer Ratio h
FE
V
CE
= –12 V
Pulse
800
600
400
DC Current Transfer Ratio vs.
Collector Current
V
CE
= –12 V
Pulse
Ta = 100°C
0
–25
75 50 25
200
–0.4
–0.6
–0.8
Base to Emitter Voltage V
BE
(V)
–0.1 –0.3
–1.0
–3
Collector Current I
C
(mA)
–10
–30
3
HITACHI [ HITACHI SEMICONDUCTOR ]
