2SB715, 2SB716, 2SB716A
Gain Bandwidth Product vs.
Collector Current
Gain Bandwidth Product f
T
(MHz)
1,000
V
CE
= –12 V
300
100
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance C
ob
(pF)
50
f = 1 MHz
I
E
= 0
20
10
5
30
10
5
–0.01 –0.03
–0.1 –0.3
–1.0
–3
Collector Current I
C
(mA)
–10
–30–50
2
1.0
0.5
–1
–3
–10
–30
–100
Collector to Base Voltage V
CB
(V)
Area of Safe Operation
–100
I
C (max)
Collector Current I
C
(mA)
–50
–20
–10
(–100 V, –7.5 mA)
–5
–2
(–120 V, –5 mA)
(–140 V, –4 mA)
2SB715
2SB716A
2SB716
D
C
Ta = 25°C
P
C
75
O
pe 0 m
ra
W
tio
n
(–50 V, –15 mA)
=
–1
–5 –10 –20
–50 –100 –200 –500
Collector to Emitter Voltage V
CE
(V)
4
HITACHI [ HITACHI SEMICONDUCTOR ]
