2SB649, 2SB649A
DC Current Transfer Ratio
vs. Collector Current
V
CE
= –5V
Ta = 75
°C
25
°C
Collector to Emitter Saturation
Voltage vs. Collector Current
Collector to emitter saturation voltage
V
CE(sat)
(V)
–1.2
I
C
= 10 I
B
–1.0
–0.8
–0.6
–0.4
–0.2
–0
–1
350
DC current transfer ratio h
FE
350
250
200
150
100
50
–25°C
Ta
–100
–10
Collector current I
C
(mA)
V
CE
= –5 V
80
40
0
–10
=7
–25
25
–1,000
Gain Bandwidth Product
vs. Collector Current
–100
–300
–30
Collector current I
C
(mA)
0
–1
–10
–100
–1,000
Collector current I
C
(mA)
Base to Emitter Saturation Voltage
vs. Collector Current
–1.2
Base to emitter saturation voltage
V
BE(sat)
(V)
–1.0
–0.8
–0.6
–0.4
–0.2
–0
–1
Ta =
C
–25
°
25
75
240
Gain bandwidth product f
T
(MHz)
I
C
= 10 I
B
200
160
120
5
°
C
–1,000
–10
–100
Collector current I
C
(mA)
–1,000
5
HITACHI [ HITACHI SEMICONDUCTOR ]
