2SB647, 2SB647A
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
P
C
Tj
Tstg
2SB647
–120
–80
–5
–1
–2
0.9
150
–55 to +150
2SB647A
–120
–100
–5
–1
–2
0.9
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
2SB647
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Symbol Min
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE1
*
1
h
FE2
Collector to emitter
saturation voltage
Base to emitter voltage
Gain bandwidth product
V
CE(sat)
V
BE
f
T
Typ
2SB647A
Max Min
—
—
—
–10
320
—
–1
Typ
Max Unit Test conditions
—
—
—
–10
200
—
–1
V
V
V
V
µA
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA, R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CB
= –100 V, I
E
= 0
V
CE
= –5 V,
I
C
= –150 mA*
2
V
CE
= –5 V,
I
C
= –500 mA*
2
I
C
= –500 mA,
I
B
= –50 mA*
2
V
CE
= –5 V,
I
C
= –150 mA*
2
–120 —
–80
–5
—
60
30
—
—
—
—
—
—
—
—
—
—
—
140
20
–120 —
–100 —
–5
—
60
30
—
—
—
—
—
—
—
140
20
–1.5 —
—
—
—
—
–1.5 V
—
—
MHz V
CE
= –5 V, I
C
= –150 mA
pF
V
CB
= –10 V, I
E
= 0
f = 1 MHz
Collector output capacitance Cob
Notes: 1. The 2SB647 and 2SB647A are grouped by h
FE1
as follows.
2. Pulse test
B
2SB647
2SB647A
60 to 120
60 to 120
C
100 to 200
100 to 200
D
160 to 320
—
2
HITACHI [ HITACHI SEMICONDUCTOR ]
