2SB566(K), 2SB566A(K)
Maximum Collector Dissipation Curve
Area Safe Operation
60
Collector power dissipation P
C
(W)
–10
–5 I
C
max (Continuous)
Collector current I
C
(A)
40
–2
T
C
= 25°C
D
C
O
pe
t
ra
io
n
–1.0
–0.5
–0.2
–0.1
–1
(–50 V, –0.22 A)
2SB566 K
(–60 V, –0.15 A)
2SB566A K
–2
–5
–10
–20
–50 –100
Collector to emitter voltage V
CE
(V)
20
0
50
100
150
Case temperature T
C
(°C)
Typical Output Characteristics
–5
–5
T
C
= 25°C
Collector current I
C
(A)
–70
–60
–50
–40
–30
–20
–10 mA
–2
–1.0
–0.5
Typical Transfer Characteristics
V
CE
= –4 V
Collector current I
C
(A)
–4
–3
–2
–0.1
–0.05
–0.02
–1
0
–2
–4
I
B
= 0
–6
–8
–10
–0.01
0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4
Base to emitter voltage V
BE
(V)
Collector to emitter voltage V
CE
(V)
25
–25
–0.2
T
C
= 75
°
C
3
HITACHI [ HITACHI SEMICONDUCTOR ]
