2SB1688
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
-300
-300
-5
-50
750
150
-55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector cutoff current
Symbol
I
CBO
I
CEO
Emitter cutoff current
Base to emitter voltage
DC current transfer raito
I
EBO
V
BE
h
FE
Min
—
—
—
—
80
—
Typ
—
—
—
—
—
—
Max
-0.1
-0.1
-10
-0.75
160
-0.9
Unit
µA
µA
µA
V
—
V
Test Conditions
V
CB
= -300V, I
E
= 0
V
CE
= -300V, R
BE
=∞
V
EB
= -5 V, I
C
= 0
V
CE
= -6V, I
C
= -1mA
V
CE
= -6V, I
C
= -2mA
I
C
= -30mA, I
B
= -3mA
Collector to emitter saturation V
CE(sat)
voltage
2
HITACHI [ HITACHI SEMICONDUCTOR ]
