2SB1530
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
P
C
*
1
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C.
Tj
Tstg
Ratings
–200
–150
–6
–2
–5
1.5
20
150
–45 to +150
°C
°C
Unit
V
V
V
A
A
W
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
–150
–6
—
60
60
—
—
Typ
—
—
—
—
—
—
—
Max
—
—
–1
200
—
–3
–1
V
V
Unit
V
V
µA
Test conditions
I
C
= –50 mA, R
BE
=
∞
I
E
= –5 mA, I
C
= 0
V
CB
= –120 V, I
E
= 0
V
CE
= –4 V, I
C
= –50 mA
V
CE
= –10 V, I
C
= –500 mA*
2
I
C
= –500 mA, I
B
= –50 mA
I
CE
= –4 A, I
C
= –50 mA
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
V
(BR)EBO
I
CBO
h
FE1
*
1
h
FE2
Collector to emitter saturation
voltage
Base to emitter voltage
V
CE(sat)
V
BE
Notes: 1. The 2SB1530 is grouped by h
FE1
as follows.
B
60 to 120
C
100 to 200
2. Pulse test.
2
HITACHI [ HITACHI SEMICONDUCTOR ]
