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2SB1407 参数 Datasheet PDF下载

2SB1407图片预览
型号: 2SB1407
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延 [Silicon PNP Epitaxial]
分类和应用:
文件页数/大小: 6 页 / 33 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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2SB1407(L)/(S)
Maximum Collector Dissipation Curve
30
Collector power dissipation Pc (W)
–10
i
C (peak)
–3
I
C (max)
Area of Safe Operation
20
Collector Current I
C
(A)
PW =
10 ms
s
1m
n
tio
era
Op
°
C)
DC = 25
(T
C
–1.0
10
–0.3
Ta = 25°C
1 Shot Pulse
0
50
100
Case Temperature T
C
(°C)
150
–0.1
–1
–3
–10
–30
–100
Collector to emitter Voltage V
CE
(V)
Typical Output Characteristics
–2.0
–16
–14
–12
DC Current Transfer Ratio vs.
Collector Current
1,000
DC current transfer ratio h
FE
Collector Current I
C
(A)
–1.6
–10
300
–1.2
–8
–6
100
–0.8
–4
–0.4
I
B
= 0
0
–2 mA
Ta = 25°C
30
V
CE
= –2 V
Ta = 25°C
–0.1
–0.3
–1.0
Collector current I
C
(A)
–3.0
–1
–2
–3
–4
–5
Collector to emitter Voltage V
CE
(V)
10
–0.03
3