2SB1401
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
P
C
*
1
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C.
Tj
Tstg
Ratings
–300
–300
–7
–0.3
–0.6
2
15
150
–55 to +150
°C
°C
Unit
V
V
V
A
A
W
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
–300
–300
–7
—
—
—
1000
1500
—
—
Typ
—
—
—
—
—
—
—
—
—
—
Max
—
—
—
–10
–10
–10
—
—
–1.5
–2.0
V
V
Unit
V
V
V
µA
Test conditions
I
C
= –1 mA, I
E
= 0
I
C
= –10 mA, R
BE
=
∞
I
E
= –1 mA, I
C
= 0
V
CB
= –300 V, I
E
= 0
V
CE
= –60 V, R
BE
=
∞
V
EB
= –5 V, I
C
= 0
V
CE
= –1.5 V, I
C
= –20 mA*
1
V
CE
= –1.5 V, I
C
= –100 mA*
1
I
C
= –100 mA, I
B
= –0.2 mA*
1
I
C
= –100 mA, I
B
= –0.2 mA*
1
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
V
(BR)EBO
I
CBO
I
CEO
I
EBO
DC current transfer ratio
h
FE1
h
FE2
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Note:
1. Pulse test.
V
CE(sat)
V
BE(sat)
2
HITACHI [ HITACHI SEMICONDUCTOR ]
