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2SB1399 参数 Datasheet PDF下载

2SB1399图片预览
型号: 2SB1399
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅三重扩散 [Silicon PNP Triple Diffused]
分类和应用: 晶体晶体管功率双极晶体管放大器局域网
文件页数/大小: 6 页 / 39 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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2SB1399
Maximum Collector Dissipation Curve
30
Collector power dissipation Pc (W)
–30 i
C (peak)
s
s
1m
s
0
µ
0m
10
=1
Area of Safe Operation
1
µ
s
Collector Current I
C
(A)
–10
–3
–1.0
–0.3
–0.1
I
C (max)
DC
PW
20
r
pe
O
io
at
n
(T
C
=
°
25
10
C)
Ta = 25°C
1 Shot pulse
0
50
100
Case Temperature T
C
(°C)
150
–0.03
–0.3 –1.0 –3
–10 –30 –100 –300
Collector to emitter Voltage V
CE
(V)
Typical Output Characteristics
–10
P
C
DC Current Transfer Ratio vs.
Collector Current
10,000
DC current transfer ratio h
FE
3,000
1,000
300
100
30
10
–0.1 –0.3 –1.0 –3
–10 –30
Collector current I
C
(A)
V
CE
= –3 V
=
°
C
75
T
C
= 25°C
Collector Current I
C
(A)
–8
–6
–4
–2.0
–1.8
–1.6
–1.4
–1.2
–1.0
–0.8
=
30
W
T
C
25°C
–25°C
–0.6
–2
–0.4 mA
I
B
= 0
0
–1.0
–2
–3
–4
–5
Collector to emitter Voltage V
CE
(V)
–100
3