2SB1091
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
–60
–7
—
—
1000
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
1.0
2.5
0.5
Max
—
—
–100
–10
20000
–1.5
–3.0
–2.0
–3.5
—
—
—
V
V
V
V
µs
µs
µs
Unit
V
V
µA
µA
Test conditions
I
C
= –25 mA, R
BE
=
∞
I
E
= –50 mA, I
C
= 0
V
CB
= –60 V, I
E
= 0
V
CE
= –50 V, R
BE
=
∞
V
CE
= –3 V, I
C
= –4 A*
1
I
C
= –4 A, I
B
= –8 mA*
1
I
C
= –8 A, I
B
= –80 mA*
1
I
C
= –4 A, I
B
= –8 mA*
1
I
C
= –8 A, I
B
= –80 mA*
1
I
C
= –4 A, I
B1
= –I
B2
= –8 mA
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
V
(BR)EBO
I
CBO
I
CEO
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time
Storage time
Fall time
Note:
1. Pulse Test.
h
FE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
t
on
t
stg
t
f
Maximum Collector Dissipation Curve
60
Collector power dissipation Pc (W)
–20
–10
Collector Current I
C
(A)
–5
–2
Area of Safe Operation
i
C (peak)
I
C (max)
1
µs
100
µs
s
1m
PW
=1
40
0m
DC
–1.0
–0.5
–0.2
Ta = 25°C
–0.1 1 Shot pulse
–0.05
s
on
ati
er
Op
20
0
50
100
Case Temperature T
C
(°C)
150
–0.02
–1
–2
–5 –10 –20
–50 –100
Collector to emitter Voltage V
CE
(V)
2
HITACHI [ HITACHI SEMICONDUCTOR ]
