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2SB1072S 参数 Datasheet PDF下载

2SB1072S图片预览
型号: 2SB1072S
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅三重扩散 [Silicon PNP Triple Diffused]
分类和应用: 晶体小信号双极晶体管放大器
文件页数/大小: 6 页 / 38 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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2SB1072(L), 2SB1072(S)
Maximum Collector Dissipation
Curve
30
Collector power dissipation P
C
(W)
20
10
Collector current I
C
(A)
i
C(peak)
1
µs
s
0
µ
1 ms
10
Area of Safe Operation
20
–3 I
C(max)
PW
–1.0
–0.3
–0.1
–0.03
Ta = 25°C
1 Shot Pulse
0m
=1
s
(T
C
DC
=2
10
C
5
°
)
0
50
100
Case temperature T
C
(°C)
150
–1
–2
–5 –10 –20
–50 –100
Collector to emitter voltage V
CE
(V)
Typical Output Characteristics
–5
P
C
= 20 W
DC current transfer ratio h
FE
0
–1.
.9
–0
0.8
–0.7
–0.6
DC Current Transfer Ratio
vs. Collector Current
30000
10000
3000
1000
300
100
V
CE
= –3 V
30
–0.1
Collector current I
C
(A)
–4
–3
–0.5
–2
–0.4
–1
I
B
= –0.3 mA
5
°
C
T
C
5
°
C
= 2
°
C
T
C
–25
=
T
C
=7
0
–2
–4
–6
–8
–10
Collector to emitter voltage V
CE
(V)
–1.0
–3
–0.3
Collector current I
C
(A)
–10
3