2SB1059
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Ratings
–70
–50
–6
–1
0.75
150
–55 to +150
Unit
V
V
V
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
–70
–50
–6
—
—
100
—
—
—
Typ
—
—
—
—
—
—
—
65
35
Max
—
—
—
–1
–0.2
320
–0.6
—
—
V
MHz
pF
Unit
V
V
V
µA
µA
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA, R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CB
= –55 V, I
E
= 0
V
EB
= –6 V, I
C
= 0
V
CE
= –2 V, I
C
= –0.1 A
I
C
= –1 A, I
B
= –0.1 A
V
CE
= –2 V, I
C
= –10 mA
V
CB
= –10 V, I
E
= 0, f = 1 MHz
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Gain bandwidth product
Collector output capacitance
Note:
B
100 to 200
C
160 to 320
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
f
T
Cob
1. The 2SB1059 is grouped by h
FE
as follows.
See characteristic curves of 2SB740.
2
HITACHI [ HITACHI SEMICONDUCTOR ]
