2SB1048
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
*
1
P
C
*
2
Tj
Tstg
Ratings
–60
–60
–7
–1
–2
1
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Notes: 1. PW
≤
10 ms, Duty cycle
≤
20%
2. Value on the alumina ceramic board (12.5
×
30
×
0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Notes: 1. Pulse test
2. Marking is “BT”
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
Min
–60
–60
—
—
2000
—
—
Typ
—
—
—
—
—
—
—
Max
—
—
–10
–10
100000
–2.0
–2.0
V
V
Unit
V
V
µA
µA
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA, R
BE
=
∞
V
CB
= –60 V, I
E
= 0
V
EB
= –7 V, I
E
= 0
V
CE
= –3 V, I
C
= –500 mA*
1
I
C
= –500 mA, I
B
= –1 mA*
1
I
C
= –500 mA, I
B
= –1 mA*
1
2
HITACHI [ HITACHI SEMICONDUCTOR ]
