2SB1032(K)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
C to E diode forward current
Collector power dissipation
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
I
D
*
1
P
C
*
1
Tj
Tstg
Rating
–120
–120
–7
–10
–15
10
80
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
–120
–7
—
—
1000
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
0.8
4.0
Max
—
—
–100
–10
20000
–1.5
–3.0
–2.0
–3.5
3.0
—
—
V
V
V
V
V
µs
µs
Unit
V
V
µA
µA
Test conditions
I
C
= –25 mA, R
BE
=
∞
I
E
= –200 mA, I
C
= 0
V
CB
= –120 V, I
E
= 0
V
CE
= –100 V, R
BE
=
∞
V
CE
= –3 V, I
C
= –5 A*
1
I
C
= –5 A, I
B
= –10 mA*
1
I
C
= –10 A, I
B
= –0.1 A*
1
I
C
= –5 A, I
B
= –10 mA*
1
I
C
= –10 A, I
B
= –0.1 A*
1
I
D
= 10 A*
1
V
CC
= –30 V,
I
C
= –5 A, I
B1
= –I
B2
= –10 mA
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
V
(BR)EBO
I
CBO
I
CEO
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
C to E diode forward voltage
Turn on time
Turn off time
Note:
1. Pulse test
h
FE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
V
D
t
on
t
off
2
HITACHI [ HITACHI SEMICONDUCTOR ]
