2SB1026
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
*
1
P
C
*
2
Tj
Tstg
Ratings
–120
–100
–5
–1
–2
1
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Notes: 1. PW
≤
10 ms, Duty cycle
≤
20%
2. Value on the alumina ceramic board (12.5
×
20
×
0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE1
*
1
h
FE2
Collector to emitter saturation
voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
Note:
Mark
h
FE1
V
CE(sat)
V
BE
f
T
Cob
Min
–120
–100
–5
—
60
30
—
—
—
—
Typ
—
—
—
—
—
—
—
—
140
20
Max
—
—
—
–10
200
—
–1
–0.9
—
—
V
V
MHz
pF
Unit
V
V
V
µA
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA, R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CB
= –100 V, I
E
= 0
V
CE
= –5 V, I
C
= –150 mA
V
CE
= –5 V,
I
C
= –500 mA (Pulse test)
I
C
= –500 mA,
I
B
= –50 mA (Pulse test)
V
CE
= –5 V, I
C
= –150 mA
V
CE
= –5 V, I
C
= –150 mA
V
CB
= –10 V, I
E
= 0,
f = 1 MHz
1. The 2SB1026 is grouped by h
FE1
as follows.
DL
60 to 120
DM
100 to 200
See characteristic curves of 2SB1025.
2
HITACHI [ HITACHI SEMICONDUCTOR ]
