2SB1025
Saturation Voltage vs. Collector Current
Collector to Emitter Saturation Voltage
V
CE (sat)
(V)
–0.6
Base to Emitter Saturation Voltage
V
BE (sat)
(V)
–0.5
–0.4
–0.3
–0.2
–0.1
0
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
0
–1
V
CE (sat)
–3
–10 –30 –100 –300 –1,000
Collector Current I
C
(mA)
I
C
= 10 I
B
Pulse
V
BE (sat)
Ta =
25
75
C
–25
°
Ta = 75°C
25
–25
Gain Bandwidth Product vs.
Collector Current
Collector Output Capacitance C
ob
(pF)
200
100
50
Gain Bandwidth Product f
T
(MHz)
V
CE
= –5 V
300
Collector Output Capacitance vs.
Collector to Base Voltage
f = 1 MHz
I
E
= 0
20
10
5
200
100
–10
–30
–100
–300
Collector Current I
C
(mA)
–1,000
2
–1
–2
–5 –10 –20
–50 –100
Collector to Base Voltage V
CB
(V)
4
HITACHI [ HITACHI SEMICONDUCTOR ]
