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2SB1012K 参数 Datasheet PDF下载

2SB1012K图片预览
型号: 2SB1012K
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延 [Silicon PNP Epitaxial]
分类和应用: 晶体小信号双极晶体管放大器局域网
文件页数/大小: 6 页 / 36 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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2SB1012(K)
Maximum Collector Dissipation Curve
30
Collector power dissipation Pc (W)
–3
–1.0
–0.3
DC
(T
C
Area of Safe Operation
i
C (peak)
I
C (max)
0
µ
10
s
1
µs
Collector Current I
C
(A)
PW
=
1m
20
s
10
–0.1
–0.03 Ta = 25°C
1 Shot pulse
–0.01
–0.003
–3
ms
5
°
C
=2
10
0
50
100
Case Temperature T
C
(°C)
150
–10
–30
–100
–300
Collector to emitter Voltage V
CE
(V)
Typical Output Characteristics
–5
DC current transfer ratio h
FE
T
C
= 25°C
Pulse
–7 mA –5 mA
–3 mA
–1 mA
–0.5 mA
DC Current Transfer Ratio vs.
Collector Current
30,000
V
CE
= –3 V
10,000
3,000
1,000
300
100
30
–0.03
=
Ta
C
75
°
)
Collector Current I
C
(A)
–4
–3
–2
25°C
–25°C
Pulse Test
–1
I
B
= –0.3 mA
0
–1
–2
–3
–4
–5
Collector to emitter Voltage V
CE
(V)
–0.1
–0.3
–1.0
Collector current I
C
(A)
–3
3